IRLML6246TRPBF application(s) micro3 tm (sot-23) IRLML6246TRPBF d s g 3 1 2 ? load/ system switch features and benefits features benefits v ds 20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 46 m r ds(on) max (@v gs = 2.5v) 66 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 w c/w a max. 4.1 3.3 -55 to + 150 12 0.01 20 1.3 0.8 16 industry-standard sot-23 package multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen results in environmentally friendly hexfet power mosfet 1 of 2 sales@zpsemi.com www.zpsemi.com
d s g electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c ??? 30 46 ??? 45 66 v gs(th) gate threshold voltage 0.5 0.8 1.1 v i dss ??? ??? 1.0 ??? ??? 10 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 4.0 ??? gfs forward transconductance 10 ??? ??? s q g total gate charge ??? 3.5 ??? q gs gate-to-source charge ??? 0.26 ??? q gd gate-to-drain ("miller") charge ??? 1.7 ??? t d(on) turn-on delay time ??? 3.6 ??? t r rise time ??? 4.9 ??? t d(off) turn-off delay time ??? 11 ??? t f fall time ??? 6.0 ??? c is s input capacitance ??? 290 ??? c os s output capacitance ??? 64 ??? c rs s reverse transfer capacitance ??? 41 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 8.6 13 ns q rr reverse recovery charge ??? 2.8 4.2 nc i d = 1.0a t j = 25c, v r = 15v, i f =1.3a v ds = 16v, v gs = 0v, t j = 55c v ds = 16v ? = 1.0mhz r g = 6.8 v gs = 4.5v di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = 4.1a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 4.1a mosfet symbol showing the v ds =10v conditions v gs = 4.5v v gs = 0v r ds (o n) v gs = 2.5v, i d = 3.3a static drain-to-source on-resistance drain-to-source leakage current a m v dd =10v na nc ns v ds = v gs , i d = 5 a v ds =16v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v ds = 10v, i d = 4.1a i d = 4.1a ??? ??? ??? ??? pf a 1.3 16 IRLML6246TRPBF hexfet power mosfet 2 of 2 sales@zpsemi.com www.zpsemi.com
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